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| 2N/SST5460 Series P-Channel JFETs 2N5460 2N5461 2N5462 Product Summary Part Number 2N/SST5460 2N/SST5461 2N/SST5462 SST5460 SST5461 SST5462 VGS(off) (V) 0.75 to 6 1 to 7.5 1.8 to 9 V(BR)GSS Min (V) 40 40 40 gfs Min (mS) 1 1.5 2 IDSS Min (mA) -1 -2 -4 Features D D D D High Input Impedance Very Low Noise High Gain: AV = 80 @ 20 mA Low Capacitance: 1.2 pF Typical Benefits D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification Applications D Low-Current, Low-Voltage Amplifiers D High-Side Switching D Ultrahigh Input Impedance Pre-Amplifiers Description The 2N/SST5460 series are p-channel JFETs designed to provide all-around performance in a wide range of amplifier and analog switch applications. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), plastic packages provide low cost options, and are available in tape-and-reel for automated assembly, (see Packaging Information). TO-226AA (TO-92) 1 2N5460 2N5461 2N5462 D 1 TO-236 (SOT-23) SST5460 (B0)* SST5461 (B1)* SST5462 (B2)* *Marking Code for TO-236 S D 2 3 S 2 G G 3 Top View Top View Absolute Maximum Ratings Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 150_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70262. Siliconix S-52431--Rev. C, 05-May-97 1 2N/SST5460 Series Specificationsa Limits 2N/SST5460 2N/SST5461 2N/SST5462 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Current Drain Cutoff Current Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID(off) IG = 10 mA , VDS = 0 V VDS = -15 V, ID = -1 mA VDS = -15 V, VGS = 0 V VGS = 20 V, VDS = 0 V TA = 100_C VDG = -20 V, ID = -0.1 mA VDS = -15 V, VGS = 10 V ID = -0.1 mA 55 40 0.75 -1 6 -5 5 1 40 1 -2 7.5 -9 5 1 40 V 1.8 -4 9 -16 5 1 mA nA mA pA 0.003 0.0003 3 -5 1.3 2.3 3.8 -0.7 0.5 4 0.8 4.5 1.5 6 V Gate-Source Voltage VGS VDS = -15 V ID = -0.2 mA ID = -0.4 mA Gate-Source Forward Voltage VGS(F) IG = -1 mA , VDS = 0 V Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Reverse Transfer Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input q p Noise Voltage gfs gos 2N Ci iss VDS = -15 V, VGS = 0 V f = 1 MHz 2N Coss VDS = -15 V, VGS = 0 V S f = 100 Hz VDS = -15 V, VGS = 0 V f = 100 Hz RG = 1 MW Hz, BW = 1 Hz SST 2N SST 2N SST SST 4.5 4.5 1.2 1.5 1.5 15 15 0.2 0.2 PSCIB 2.5 2.5 2.5 dB 115 115 115 nV Hz 2 2 2 pF 1 VDS = -15 V, VGS = 0 V S f = 1 kHz 75 7 75 7 75 7 4 1.5 5 2 6 mS mS Crss en Noise Figure NF Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. 2 Siliconix S-52431--Rev. C, 05-May-97 2N/SST5460 Series Typical Characteristics 3 1 Drain Current and Transconductance vs. Gate-Source Cutoff Voltage -20 I DSS - Saturation Drain Current (mA) 5 rDS(on) - Drain-Source On-Resistance ( W ) g fs - Forward Transconductance (mS) 1000 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 -16 gfs -12 IDSS 2.5 -8 800 80 g os - Output Conductance ( mS) 600 rDS 400 gos 60 40 -4 gfs @ VDS = -15 V, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V f = 1 kHz 0 0 2 4 6 8 10 VGS(off) - Gate-Source Cutoff Voltage (V) 200 rDS @ ID = -100 mA, VGS = 0 V gos @ VDS = -15 V, VGS = 0 V f = 1 kHz 0 2 4 6 8 10 20 0 0 VGS(off) - Gate-Source Cutoff Voltage (V) 0 Output Characteristics -2 VGS(off) = 1.5 V -10 VGS = 0 V 0.2 V I D - Drain Current (mA) -8 Output Characteristics VGS(off) = 3 V -1.6 I D - Drain Current (mA) -1.2 0.4 V 0.6 V 0.8 V 1.0 V -6 VGS = 0 V 0.5 V 1.0 V -0.8 -4 -0.4 -2 1.5 V 2.0 V 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V) 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V) Output Characteristics -0.5 VGS(off) = 1.5 V I D - Drain Current (mA) -0.4 VGS = 0 V 0.2 V 0.4 V 0.6 V I D - Drain Current (mA) -1.6 -2 Output Characteristics VGS(off) = 3 V 0.5 V 1.0 V -1.2 1.5 V -0.8 2.0 V -0.4 1.2 V 2.5 V 0 -1 0 -0.2 -0.4 -0.6 -0.8 -1 VGS = 0 V -0.3 0.8 V -0.2 1.0 V -0.1 0 0 -0.2 -0.4 -0.6 -0.8 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Siliconix S-52431--Rev. C, 05-May-97 3 2N/SST5460 Series Typical Characteristics (Cont'd) Transfer Characteristics -5 VGS(off) = 1.5 V -4 I D - Drain Current (mA) I D - Drain Current (mA) VDS = -15 V -8 -10 VGS(off) = 3 V VDS = -15 V Transfer Characteristics -3 TA = -55_C 25_C -1 125_C 0 0 0.4 0.8 1.2 1.6 2 VGS - Gate-Source Voltage (V) 1000 -6 TA = -55_C -2 -4 25_C -2 125_C 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 10 nA On-Resistance vs. Drain Current TA = 25_C Gate Leakage Current rDS(on) - Drain-Source On-Resistance ( W ) 800 VGS(off) = 1.5 V I G - Gate Leakage 1 nA -5 mA TA = 125_C -1 mA 600 100 pA IGSS @ 125_C 3V 400 4V 200 10 p A TA = 25_C 1 pA -5 mA -0.1 mA IGSS @ 25_C 0 -0.1 -1 ID - Drain Current (mA) -10 0.1 pA 0 -10 -20 -30 -40 -50 VDG - Drain-Gate Voltage (V) Transconductance vs. Gate-Source Voltage 5 g fs - Forward Transconductance (mS) g fs - Forward Transconductance (mS) VGS(off) = 1.5 V 4 VDS = -15 V f = 1 kHz 5 Transconductance vs. Gate-Source Voltage VGS(off) = 3 V 4 TA = -55_C 3 25_C VDS = -15 V f = 1 kHz 3 TA = -55_C 2 25_C 2 125_C 1 1 125_C 0 0 0.4 0.8 1.2 1.6 2 VGS - Gate-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 4 Siliconix S-52431--Rev. C, 05-May-97 2N/SST5460 Series Typical Characteristics (Cont'd) 100 Circuit Voltage Gain vs. Drain Current g fs - Forward Transconductance (mS) 10 Common-Source Forward Transconductance vs. Drain Current VGS(off) = 3 V 80 A V - Voltage Gain VGS(off) = 1.5 V 60 TA = -55_C 1 125_C 25_C VGS(off) = 3 V 40 20 0 Assume VDD = -15 V, VDS = -5 V g fs R L R L + 10 V AV + ID 1 ) R Lg os -0.01 -0.1 ID - Drain Current (mA) -1 VDS = -15 V f = 1 kHz 0.1 -0.1 -1 ID - Drain Current (mA) -10 Common-Source Input Capacitance vs. Gate-Source Voltage 10 f = 1 MHz C iss - Input Capacitance (pF) 8 C rss - Reverse Feedback Capacitance (pF) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 5 f = 1 MHz 6 2.5 4 -5 V 2 -5 V -15 V 0 -15 V 0 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) 100 0 4 8 12 16 20 VGS - Gate-Source Voltage (V) 20 Equivalent Input Noise Voltage vs. Frequency VDS = -15 V Output Conductance vs. Drain Current VGS(off) = 3 V (nV / Hz) g os - Output Conductance (mS) 16 TA = -55_C 12 25_C 8 125_C 4 VDS = -15 V f = 1 kHz -1 ID - Drain Current (mA) -10 ID = -0.1 mA 10 ID = -1 mA e n - Noise Voltage 1 10 100 1k 10 k f - Frequency (Hz) 100 k 0 -0.1 Siliconix S-52431--Rev. C, 05-May-97 5 |
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